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C853U0 2022100K CDB4228 DM700 MC6804J1 1691A AM2520E C853U0
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  Datasheet File OCR Text:
 10 10V 3V 8 4.5V
10
8
Vds=5V
Id (A)
4
Id(A)
4 125C 2 25C 0 4 5 0
6
2.5V
6
2
Vgs=2V
0 0 1 2 3 Vds (Volts) Fig 1: On-Region Characteristics 200 175
0.5
1
1.5
2
2.5
3
3.5
Vgs(Volts) Figure 2: Transfer Characteristics 1.6
Normalized On-Resistance
Id=1A 1.4 Vgs=4.5V Vgs=10V 1.2 Vgs=2.5V 1
Rds(on) (m:)
150 125 100 75
Vgs=2.5V
Vgs=4.5V
Vgs=10V 50 0 2 4 6 8 10 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
200
1.0E+01 1.0E+00 Id=1A
Rds(on) (m:)
150
1.0E-01
Is (A)
125C 1.0E-02 1.0E-03
125C 100 25C
1.0E-04 1.0E-05 0 2 4 6 8 10 0.0 0.2 0.4
25C
50 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.6
0.8
1.0
1.2
Vsd (Volts) Figure 6: Body-Diode Characteristics
5 Vds=15V Id=1.7A 4
600 500
Capacitance (pF)
Ciss 400 300 200 100 0 Coss Crss
Vgs (Volts)
3 2 1 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
10
15
20
25
30
Vds (Volts) Figure 8: Capacitance Characteristics
100 Tj(max)=150C Ta=25C 10 Rds(on) limited 1 0.1s 1s 10s DC 0.01 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100Ps 1ms 10ms 10Ps
14 12 10 Tj(max)=150C Ta=25C
Id (Amps)
Power (W)
8 6 4 2 0 0.001
0.1
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=360C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton T Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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